AON6458 250v,14a n-channel mosfet general description product summary 300v@150 i d (atv gs =10v) 14a r ds(on) (atv gs =10v) <0.17 w 100%uistested! 100%r g tested! theAON6458isfabricatedusinganadvancedhighvo ltage mosfetprocessthatisdesignedtodeliverhighlev elsof performanceandrobustnessinpopularacdc applications.byprovidinglowr ds(on) ,c iss andc rss alongwith guaranteedavalanchecapabilitythisdevicecanbe adopted quicklyintonewandexistingofflinepowersupply designs.thisdeviceisidealforboostconvertersa nd synchronousrectifiersforconsumer,telecom,indus trial powersuppliesandledbacklighting. v ds absolute maximum ratings t a =25c unless otherwise noted g ds pin1 dfn5x6 top view bottom view top view 12 3 4 87 6 5 symbol v ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg symbol t10s steadystate steadystate r q jc maximumjunctiontocase avalanchecurrent c 4.5 repetitiveavalancheenergy c 304 singlepulsedavalancheenergy h 608 t c =25c 2 t a =70c 1.25 maximumjunctiontoambient a r q ja maximumjunctiontoambient ad max 53 units w 30 junctionandstoragetemperaturerange 50to150 c t a =25c p dsm c/w 24 parameter powerdissipation a typ thermal characteristics v units parameter a maximum drainsourcevoltage 250 v 30 gatesourcevoltage t c =100c a i d t c =25c 14 8.8 42 pulseddraincurrent c continuousdrain current b powerdissipation b 33 a mj t c =100c 83 v/ns 5 p d mj ww continuousdrain current t a =25c i dsm 2.2 a t a =70c 1.7 c/w c/w 1 64 1.5 g ds pin1 dfn5x6 top view bottom view top view 12 3 4 87 6 5 rev0:june2011 www.aosmd.com page1of6
AON6458 symbol min typ max units 250 300 bv dss /?tj 0.25 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 3.2 3.8 4.5 v r ds(on) 0.14 0.17 w g fs 16 s v sd 0.72 1 v i s maximumbodydiodecontinuouscurrent 14 a i sm 42 a c iss 810 1028 1240 pf c oss 110 167 225 pf c rss 5 11 17 pf r g 1.9 3.9 5.9 w q g 17 22 27 nc q gs 6.3 nc q gd 8 nc t d(on) 28 ns t r 57 ns t d(off) 65 ns v ds =5v, i d =250 m a v ds =200v,t j =125c staticdrainsourceonresistance v gs =10v,i d =10a v ds =0v,v gs =30v maximumbodydiodepulsedcurrent inputcapacitance outputcapacitance dynamic parameters turnonrisetime turnoffdelaytime gatedraincharge gatesourcecharge reversetransfercapacitance v gs =0v,v ds =25v,f=1mhz gateresistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zerogatevoltagedraincurrent v ds =250v,v gs =0v m a v zerogatevoltagedraincurrent drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c bv dss id=250a,vgs=0v switching parameters forwardtransconductance i s =1a,v gs =0v v ds =40v,i d =10a totalgatecharge v gs =10v,v ds =200v,i d =10a v gs =10v,v ds =125v,i d =10a, r g =25 w turnondelaytime diodeforwardvoltage v gs =0v,v ds =0v,f=1mhz t d(off) 65 ns t f 40 ns t rr 125 158 190 ns q rr 0.8 1 1.2 m c thisproducthasbeendesignedandqualifiedforth econsumermarket.applicationsorusesascritical componentsinlifesupportdevicesorsystemsaren otauthorized.aosdoesnotassumeanyliabilityar ising outofsuchapplicationsorusesofitsproducts. aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. bodydiodereverserecoverycharge i f =10a,di/dt=100a/ m s,v ds =100v turnoffdelaytime bodydiodereverserecoverytime i f =10a,di/dt=100a/ m s,v ds =100v turnofffalltime r g =25 w a.thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenviron mentwitht a =25 c.the powerdissipationp dsm isbasedonr q ja t 10svalueandthemaximumallowedjunctiontemperat ureof150 c.thevalueinanygiven applicationdependsontheuser'sspecificboardde sign. b.thepowerdissipationpdisbasedont j(max) =150 c,usingjunctiontocasethermalresistance,andi smoreusefulinsettingtheupper dissipationlimitforcaseswhereadditionalheatsi nkingisused. c.repetitiverating,pulsewidthlimitedbyjuncti ontemperature t j(max) =150 c.ratingsarebasedonlowfrequencyanddutycycl estokeepinitial t j =25 c. d.ther q ja isthesumofthethermalimpedancefromjunctiont ocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6are obtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocaset hermalimpedancewhichismeasuredwiththedevice mountedtoalargeheatsink,assuminga maximumjunctiontemperatureoft j(max) =150 c.thesoacurveprovidesasinglepulserating. g.thesetestsareperformedwiththedevicemounted on1in 2 fr4boardwith2oz.copper,inastillairenviron mentwitht a =25 c. h.l=60mh,i as =4.5a,v dd =150v,r g =25 ? ,startingt j =25 c. rev0:june2011 www.aosmd.com page2of6
AON6458 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5.5v 6.0v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics 55 c v ds =40v 25 c 125 c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 5 10 15 20 25 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 100 50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =10a 40 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5.5v 6.0v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics 55 c v ds =40v 25 c 125 c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 5 10 15 20 25 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 100 50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =10a 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev0:june2011 www.aosmd.com page2of6
AON6458 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =200v i d =10a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c 0 3 6 9 12 15 0 5 10 15 20 25 30 35 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =200v i d =10a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d rev0:june2011 www.aosmd.com page2of6
AON6458 typical electrical and thermal characteristics 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note b) 0 3 6 9 12 15 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note b) 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note g) t j(max) =150 c t a =25 c 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note b) 0 3 6 9 12 15 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note b) 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) t j(max) =150 c t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =64 c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d rev0:june2011 www.aosmd.com page2of6
AON6458 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclampedinductiveswitching(uis)testcircuit& waveforms vds ar dss 2 e=1/2li ar ar + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms ig vgs + vdc dut l vds vgs vds isd isd dioderecoverytes tcircuit&waveforms vds vds+ i f ar dss 2 e=1/2li di/dt i rm rr vdd vdd q=idt t rr ar ar rev0:june2011 www.aosmd.com page2of6
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